MB1S Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – 0.5 Ampere Glass Passivated Bridge Rectifiers

MB1S~MB10S
Rev.C Feb.-2015
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
Maximum Repetitive Peak
Reverse Voltage
Maximum RMS voltage
Maximum DC Blocking
Voltage
Average Rectified Output
Currentat T_a = 50℃
Peak Forward Surge
Current 8.3 ms Single Half
Sine Wave Superimposed
on Rated Load (JEDEC
Method)
Typical Junction
Capacitance^{（Note1）}
Typical Thermal
Resistance^{（Note2）}
Typical Thermal
Resistance^{（Note2）}
Operating and Storage
Temperature Range
V_RRM
V_RMS
V_DC
I_o
I_FSM
C_j
R_θJA
R_θJL
T_j,T_stg
MB1S
100
70
100
MB2S
200
140
200
数值
Rating
MB4S MB6S
400
600
280
420
400
600
0.8
30
13
95
30
-55~+150
Note:
1. Measured at 1MHz and applied reverse voltage of 4 V D.C.
2. Mounted on glass epoxy PC board with 4×( 5×5mm²ï¼‰copper pad..
MB8S
800
560
800
单位
MB10S
Unit
1000
V
700
V
1000
V
A
A
pF
℃ /W
℃ /W
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Maximum Forward
Voltage
Maximum DC
Reverse Current at
Maximum DC
Blocking Voltage
符号
Symbol
V_F
测试条件
Test
condition
I_F=0.4A
I_F=0.8A
I_R
T_a=25℃
T_a=125℃
数值
Rating
1.0
1.1
5.0
40
单位
Unit
V
μA
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