LV4050BCT Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Schottky Barrier Diode in a TO-263 Plastic Package

LV4045BCT-LV4060BCT
Rev.E May.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Peak Repetitive Reverse Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge
Current
Average forward current
Non-Repetitive Peak Forward Surge
Current
Thermal Resistance Junction to
Ambient case
Operating and Storage Temperature
Range
符号
Symbol
V_RRM
V_RMS
I_O
数值
Rating
LV4045BCT LV4050BCT LV4060BCT
45
50
60
32
35
42
40
单位
Unit
V
V
A
I_FSM
300
A
I_F(AV)
2×20
A
I_FSM
300
A
R_θJc
1.8
℃/W
T_j T_stg
-55～+150
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
符号
测试条件
Symbol Test Conditions
数值
Rating
单位
LV4045BCT LV4050BCT LV4060BCT ^Unit
Reverse Breakdown
Voltage
V_BR I_R=1mA(Ta=25℃)
I_F =10A(Ta=25℃)
45
50
470
60
V
500
mV
Forward Voltage
I_F =20A(Ta=25℃)
V_{F IF =30A(Ta=25℃)}
550
700
600
mV
mV
I_F =20A(Ta=125℃)
600
mV
Instantaneous Reverse I_R ^{VR=VBR(Ta=25℃)}
current (Note1)
（Note 1） _{VR=VBR(Ta=125℃)}
500
μA
100
mA
Total Capacitance
C_T
1000
pF
Voltage Rate of Change dV/dt
10000
V/us
注/Notes：
1. 使用极短的测试时间，以尽量减少自热效应。/Short duration pulse test used to minimize self-heating
effect.
2. 除非特别注明，数值为一个芯片的参数。/ Unless otherwise noted, values for the parameters of a
single chip.
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