LV30200PT Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Schottky Barrier Diode in a TO-3P Plastic Package

LV30200PT
Rev.F Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average forward current
Non-Repetitive Peak Forward Surge Current
Thermal Resistance Junction to Ambient case
Operating and Storage Temperature Range
符号
Symbol
V_RM
V_RWM
V_DC
V_RMS
I_F(AV)
I_FSM
R_θJc
T_j T_stg
DATA SHEET
数值
Rating
200
140
2×15
200
1.4
-40～+150
单位
Unit
V
V
A
A
℃ /W
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
符号
测试条件
最小值 典型值 最大值 单位
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Reverse Breakdown Voltage
V_BR I_R=1mA(Ta=25℃)
200
V
I_F =5A(Ta=25℃)
0.73 0.85 V
I_F =10A(Ta=25℃)
0.80 0.95 V
Forward Voltage
I_F =15A(Ta=25℃)
V_F
I_F =5A(Ta=125℃)
0.92 1.15 V
0.58
V
I_F =10A(Ta=125℃)
0.66
V
I_F =15A(Ta=125℃)
0.71 0.85 V
Instantaneous Reverse current
(Note 1)
V_R=200V(Ta=25℃)
I_R（_{Note 1}） _{VR=200V(Ta=125℃)}
4 20 μA
5 10 mA
注/Notes：
1. 使用极短的测试时间，以尽量减少自热效应。/Short duration pulse test used to minimize self-heating
effect.
2. 除非特别注明，数值为一个芯片的参数。/ Unless otherwise noted, values for the parameters of a
single chip.
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