LV30100PT Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Schottky Barrier Diode in a TO-3P Plastic Package

LV30100PT
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Voltage
Average Rectified Forward Current
Non Repetitive Peak Surge Current
Thermal Resistance Junction to Case
Junction and Storage Temperature Range
符号
Symbol
V_RM
V_RSM
V_DC
V_RMS
I_F(AV)
I_FSM
R_θJc
T_j T_stg
DATA SHEET
数值
Rating
100
70
2×15
200
1.4
-40～+150
单位
Unit
V
V
A
A
℃ /W
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
符号
测试条件
最小值 典型值 最大值 单位
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Breakdown Voltage
V_BR I_R=1mA(Ta=25℃)
100
V
I_F =7.5A(Ta=25℃)
0.57 0.65 V
Forward Voltage
I_F =7.5A(Ta=125℃)
V_F
I_F =15A(Ta=25℃)
0.52 0.60
V
0.73 0.80
V
I_F =15A(Ta=125℃)
0.62 0.68 V
Instantaneous Reverse Current
V_R=100V(Ta=25℃)
I_R（_{Note 1}） _{VR=100V(Ta=125℃)}
150 μA
13
25 mA
注/Notes：
1. 使用极短的测试时间，以尽量减少自热效应。/Short duration pulse test used to minimize self-heating
effect.
2. 除非特别注明，数值为一个芯片的参数。/ Unless otherwise noted, values for the parameters of a
single chip.
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