LV10150DCT Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Schottky Diode in a TO-252 Plastic Package

LV10150DCT
Rev.F May.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Forward Current
Non Repetitive Peak Surge Current
Typical Thermal Resistance Junction to Case
Junction and Storage Temperature Range
符号
Symbol
V_RRM
V_RWM
V_RM
V_RMS
I_F(AV)
I_FSM
R_θJc
T_stg T_j
DATA SHEET
数值
Rating
150
105
2×5
80
6.5
-55～150
单位
Unit
V
V
A
A
℃/W
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Reverse Voltage
Forward Voltage
Instantaneous Reverse Current
符号
测试条件
最小值 典型值 最大值
Symbol
Test Conditions
Min Typ Max
V_BR I_R=1mA
Ta=25℃ 150
I_F=3A
Ta=25℃
0.76 0.83
I_F=5A
V_F
I_F=3A
Ta=25℃
Ta=125℃
0.86 0.95
0.61
I_F=5A
Ta=125℃
0.67 0.75
I_R ^VR=150V
（_{Note 1}） _VR=150V
Ta=25℃
Ta=125℃
15
1.0 5.0
单位
Unit
V
V
V
V
V
uA
mA
注/Notes：
1. 使用极短的测试时间，以尽量减少自热效应。/Short duration pulse test used to minimize self-heating
effect.
2. 除非特别注明，数值为一个芯片的参数。/ Unless otherwise noted, values for the parameters of a
single chip.
http://www.fsbrec.com
2/6