LV10100DCT Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Schottky Diode in a TO-252 Plastic Package

LV10100DCT
Rev.F May.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Voltage
Average Rectified Forward Current
Non Repetitive Peak Surge Current
Typical Thermal Resistance Junction to Case
Junction and Storage Temperature Range
符号
Symbol
V_RRM
V_RWM
V_RM
V_RMS
I_F(AV)
I_FSM
R_θJc
T_j T_stg
数值
Rating
100
70
2X5
80
2.8
-40～150
单位
Unit
V
V
A
A
℃/W
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
符号
测试条件
最小值 典型值 最大值 单位
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Reverse Voltage
V_BR I_R=1mA
Ta=25℃ 100
V
I_F=3A
Ta=25℃
0.59
V
Forward Voltage
I_F=5A
V_F
I_F=3A
Ta=25℃
Ta=125℃
0.69 0.75 V
0.53
V
I_F=5A
Ta=125℃
0.61 0.65 V
Instantaneous Reverse Current
I_R ^VR=100V
（_{Note 1}） _VR=100V
Ta=25℃
Ta=125℃
5.0
50
uA
3.0 10 mA
注/Notes：
1. 使用极短的测试时间，以尽量减少自热效应。/Short duration pulse test used to minimize self-heating
effect.
2. 除非特别注明，数值为一个芯片的参数。/ Unless otherwise noted, values for the parameters of a
single chip.
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