KSP10 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – VHF/UHF transistor

KSP10
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
P_C(Tc=25℃ )
T_j
T_stg
DATA SHEET
数值
Rating
30
25
3.0
50
350
1.0
150
-55～150
单位
Unit
V
V
V
mA
mW
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter On Voltage
Transition Frequency
Collector Output Capacitance
Collector Base Feedback
Capacitance
Collector- Base Time Constant
符号
Symbol
V_CBO
V_CEO
V_EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(on)
f_T
C_ob
C_rb
C_c.rbb’
测试条件
Test Conditions
I_C=100μA I_E=0
I_C=1.0mA I_B=0
I_E=10μA
I_C=0
V_CB=25V
V_EB=2.0V
V_CE=10V
I_E=0
I_C=0
I_C=4.0mA
I_C=4.0mA I_B=0.4mA
V_CE=10V
V_CE=10V
f=100MHz
V_CB=10V
f=1.0MHz
V_CB=10V
f=1.0MHz
V_CB=10V
f=31.8MHz
I_C=4.0mA
I_C=4.0mA
I_E=0
I_E=0
I_C=4.0mA
最小值 典型值 最大值
Min Typ Max
30
单位
Unit
V
25
V
3.0
V
0.1 μA
0.1 μA
60
0.5
V
0.95 V
650
MHz
0.7 pF
0.35
0.65 pF
9.0 pS
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