KSE350 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – High Voltage General Purpose Applications

KSE350
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current – Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C(Tc=25℃ )
T_j
T_stg
DATA SHEET
数值
Rating
-300
-300
-5.0
-500
20
150
-55～150
单位
Unit
V
V
V
mA
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Emitter Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-off Current
DC Current Gain
符号
Symbol
V_CEO
I_CBO
I_EBO
h_FE
测试条件
Test Conditions
I_C=-1.0mA I_B=0
V_CB=-300V
V_BE=-3.0V
V_CE=-10V
I_E=0
I_C=0
I_C=-50mA
最小值 典型值 最大值 单位
Min Typ Max Unit
-300
V
-100 μA
-100 μA
30
240
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