KSE340 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – High Voltage General Purpose Applications

KSE340
Rev.F Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current – Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C(Tc=25℃₎
T_j
T_stg
DATA SHEET
数值
Rating
300
300
5.0
500
20
150
-55～150
单位
Unit
V
V
V
mA
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
符号
Symbol
V_CBO
V_CEO
V_EBO
Collector Cut-Off Current
I_CBO
Emitter Cut-off Current
I_EBO
DC Current Gain
Collector to Emitter Saturation
Voltage
h_FE
V_CE(sat)
Base to Emitter Saturation Voltage V_BE(sat)
测试条件
Test Conditions
I_C=0.1mA I_E=0
I_C=1.0mA I_B=0
I_E=0.1mA
V_CB=300V
V_BE=3.0V
V_CE=10V
I_C=50mA
I_C=50mA
I_C=0
I_E=0
I_C=0
I_C=50mA
I_B=5mA
I_B=5mA
最小值 典型值 最大值 单位
Min Typ Max Unit
300
V
300
V
5.0
V
100 μA
100 μA
30
240
1.0 V
1.2 V
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