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| IRFS830 Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – N-CHANNEL MOSFET in a TO-220F Plastic Package | |||
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IRFS830
Rev.E Dec.-2015
DATA SHEET
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Drain-Source Voltage
Drain Current
Drain Current
Drain Current - Pulsed
Gate-Source Voltage
Avalanche Current
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Power Dissipation
Operating and Storage Temperature Range
符å·
Symbol
VDSS
ID(Tc=25â)
ID(Tc=100â)
IDM
VGSS
IAR
EAS
EAR
PD(Tc=25â)
TJ,TSTG
æ°å¼
Rating
500
5.0
3.0
20
±30
4.5
292
8.75
38
-55 to 150
åä½
Unit
V
A
A
A
V
A
mJ
mJ
W
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
符å·
Symbol
æµè¯æ¡ä»¶
Test Conditions
Drain-Source Breakdown Voltage BVDSS VGS=0V
ID=250μA
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward
VDS=500V VGS=0V
IDSS
VDS=400V TC=125â
IGSS VGS=±30V VDS=0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th) VDS=VGS
RDS(on) VGS=10V
ID=250μA
ID=2.5A
Forward Transconductance
Drain-Source Diode Forward
Voltage
gFS VDS=40V
VSD VGS=0V
ID=2.5A
IS=5.0A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS=25V
f=1.0MHz
VGS=0V
Turn-On Delay Time
td(on)
Turn-On Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=250V ID=4.5A
RG=25â¦
Turn-Off Fall Time
tf
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
500
V
10 μA
100 μA
±0.1 μA
2.0
4.0 V
1.15 1.4 â¦
4.2
S
1.5 V
680 900
85 110 pF
15
20
20
50
40
90
ns
90 190
45 100
http://www.fsbrec.com
2/6
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