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| FMMT591 Datasheet, PDF (2/6 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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FMMT591
Rev.F Apr.-2017
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Peak Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
PC
Tj
Tstg
DATA SHEET
æ°å¼
Rating
-80
-60
-5.0
-1.0
-2.0
-200
500
150
-55ï½150
åä½
Unit
V
V
V
A
A
mA
mW
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown Voltage
符å·
Symbol
VCBO
VCEO
VEBO
æµè¯æ¡ä»¶
Test Conditions
IC=-100μA IB=0
IC=-10mA
IE=-100μA
IE=0
IC=0
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
-80
V
-60
V
-5.0
V
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Base Cut-Off Current
DC Current Gain
ICBO VCB=-60V IE=0
ICES VCES=-60V IE=0
IEBO VEB=-4.0V IE=0
*hFE(1) VCE=-5.0V IC=-500mA 100
*hFE(2) VCE=-5.0V IC=-1.0mA 100
*hFE(3) VCE=-5.0V IC=-1.0A
80
0.1 μA
0.1 μA
0.1 μA
300
*hFE(4) VCE=-5.0V IC=-2.0A
15
Collector to Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
VCE(sat) (1) IC=-500mA IB=-50mA
VCE(sat) (2) IC=-1.0A IB=-100mA
VBE(SAT) IC=-1.0A IB=-100mA
-0.3 V
-0.6 V
-1.2 V
Base-Emitter On Voltage(ON)
VBE(ON) VCE=-5.0V IC=-1.0A
Transition Frequency
fT
VCE=-10V IC=-50mA
f=100MHz
150
Collector-Base Breakdown Voltage Cobo VCB=-10V f=1.0MHz
-1.0 V
MHz
10 pF
*ï¼èå²æµè¯ pulse test.
http://www.fsbrec.com
2/6
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