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| FMMT491 Datasheet, PDF (2/6 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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FMMT491
Rev.F Apr.-2017
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Peak Pluse Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
ICM
PC
Tj
Tstg
DATA SHEET
æ°å¼
Rating
80
60
5.0
1.0
2.0
500
150
-55ï½150
åä½
Unit
V
V
V
A
A
mW
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
符å·
æµè¯æ¡ä»¶
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Symbol
Test Conditions
VCBO IC=100μA IE=0
*VCEO IC=10mA IB=0
Min Typ Max Unit
80
V
60
V
Emitter to Base Breakdown Voltage VEBO IE=100μA IC=0
5.0
V
Collector Cut-Off Current
ICBO VCB=60V IE=0
0.1 μA
Collector Cut-Off Current
ICES VCES=60V IE=0
0.1 μA
Emitter Base Cut-Off Current
IEBO VEB=4.0V IE=0
0.1 μA
*hFE(1) VCE=5.0V IC=500mA 100
300
DC Current Gain
*hFE(2)
*hFE(3)
VCE=5.0V
VCE=5.0V
IC=1.0mA 100
IC=1.0A
80
*hFE(4) VCE=5.0V IC=2.0A
30
Collector to Emitter Saturation
Voltage
*VCE(sat) (1) IC=500mA IB=50mA
*VCE(sat) (2) IC=1.0A IB=100mA
0.25 V
0.5 V
Base to Emitter Saturation Voltage *VBE(sat) IC=1.0A IB=100mA
1.1 V
Base-Emitter On Voltage
Transition Frequency
*VBE(on) VCE=5.0V IC=1.0A
fT
VCE=10V IC=50mA
f=100MHz
150
1.0 V
MHz
Collector-Base Breakdown Voltage Cobo VCB=10V f=1.0MHz
10 pF
*Pulsed test: pulse width=300μs. Duty cycleâ¤2%
http://www.fsbrec.com
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