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D44H11 Datasheet, PDF (2/6 Pages) Savantic, Inc. – Silicon NPN Power Transistors
D44H11
Rev.F Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Peak Collector - Continuous
Collector Power Dissipation
Thermal Resistance Junction-case
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
ICM
PC(Tc=25℃)
RθJC
Tj
Tstg
DATA SHEET
数值
Rating
80
80
5.0
10
20
50
2.5
150
-55~150
单位
Unit
V
V
V
A
A
W
℃ /W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Emitter Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation Voltage
符号
Symbol
测试条件
Test Conditions
VCEO IC=100mA IB=0
ICBO
IEBO
hFE(1)
hFE(2)
VCB=80V
VEB=5.0V
VCE=1.0V
VCE=1.0V
IE=0
IC=0
IC=2.0A
IC=4.0A
VCE(sat) IC=8.0A
IB=0.4A
VBE(sat) IC=8.0A
IB=0.8A
最小值 典型值 最大值 单位
Min Typ Max Unit
80
V
10 μA
100 μA
60
200
40
1.0 V
1.5 V
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