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BU406SL Datasheet, PDF (2/7 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon NPN transistor in a TO-126(R) Plastic Package.
BU406SL
Rev.F Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Peak Collector Current
Base Current
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
ICp
IB
PC
PC(TC=25℃ )
Tj
Tstg
DATA SHEET
数值
Rating
200
120
6.0
7.0
10
2.0
1.5
20
150
-55~150
单位
Unit
V
V
V
A
A
A
W
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Turn Off Time
符号
Symbol
测试条件
Test Conditions
ICES(1) VCE=200V VBE=0
ICES(2)
ICES(3)
ICBO
VCE=150V
VCE=150V
TC=150℃
VCE=120V
VBE=0
VBE=0
VBE=0
IEBO VBE=6.0V IC=0
hFE(1) VCE=5.0V IC=2.0A
hFE(2) VCE=5.0V IC=5.0A
VCE(sat) IC=5.0A
IB=0.5A
VBE(sat) IC=5.0A
fT
VCE=10V
toff IC=5.0A
IB=0.5A
IC=0.5A
IB=0.5A
最小值 典型值 最大值 单位
Min Typ Max Unit
100 μA
50 μA
500 μA
100 μA
1.0 mA
60
120
40
0.22 0.5 V
1.05 1.25 V
10
MHz
0.7 μS
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