BU406 Datasheet, PDF (2/7 Pages) Mospec Semiconductor – POWER TRANSISTORS(7A,150-200V,60W)

BU406
Rev.F Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
数值
Rating
400
200
6.0
7.0
10
4.0
60
150
-55～150
单位
Unit
V
V
V
A
A
A
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Cut-Off Current
符号
Symbol
I_CBO
I_CEO
I_EBO
I_CES(1)
I_CES(2)
I_CES(3)
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation Voltage
Current Gain Bandwidth Product
Turn-Off Time
h_FE
V_CE(sat)
V_BE(sat)
f_T
t_off
测试条件
Test Conditions
V_CB=400V I_E=0
V_CE=200V I_B=0
V_BE=6.0V I_C=0
V_CE=400V V_BE=0
V_CE=250V
V_CE=250V
T_C=150℃
V_CE=5.0V
V_BE=0
V_BE=0
I_C=2.0A
I_C=5.0A
I_B=0.5A
I_C=5.0A
V_CE=10V
I_C=5.0A
I_B=0.5A
I_C=0.5A
I_B=0.5A
最小值 典型值 最大值 单位
Min Typ Max Unit
10 uA
50 uA
10 uA
5 mA
100 μA
1.0 mA
60
120
1.0 V
1.2 V
10
MHz
0.75 μS
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