BTB24 Datasheet, PDF (2/8 Pages) Unisonic Technologies – 25A TRIACS

BTB24
Rev.A May.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Repetitive peak off-state voltages
RMS on-state current(full sine wave
T_C=75℃)
Non repetitive surge peak on-state
current(full cycle, T_j initial = 25 °C)
Non repetitive surge peak on-state
current(full cycle, T_j initial = 25 °C)
I^2t value for fusing
Critical rate of rise of on-state current
I_G =2xI_GT, t_r≤100 ns（F=120Hz T_j=125℃）
Non repetitive surge peak off-state
Voltage(t_p = 10 ms T_j = 25° C)
Peak gate current(t_p =20μs T_j=125℃)
Average gate power dissipation(T_j=125℃)
Operating junction temperature range
Storage junction temperature range
Junction to ambient
Junction to case (AC)
符号
Symbol
V_DRM/V_RRM
I_T(RMS)
I_TSM(F=50Hz
t=20ms)
I_TSM(F=60Hz
t=16.7ms)
I²t_(tp=10ms)
dI/dt
V_DSM/V_RSM
I_GM
P_G(AV)
T_j
T_stg
R_th(j-a)
R_th(j-c)
数值
Rating
600/800
25
250
260
340
50
V_DRM/V_RRM
+ 100
4.0
1.0
-40～125
-40～150
60
1.7
电性能参数 / Electrical Characteristics(Ta=25℃)
免缓冲器和逻辑电平（3 象限） / Snubberless and logic level（3 quadrants)
符号
Symbol
I_GT(1)
V_GT
V_GD
I_H(2)
I_L
dV/dt ⁽²⁾
(dI/dt)c ⁽²⁾
测试条件
信号区
Test Conditions
Quadrant
V_D=12V R_L=33Ω
I-II-III
V_D=12V R_L=33Ω
V_D=V_DRM R_L=3.3KΩ
T_j=125℃
I-II-III
I-II-III
I_T=500mA
I-III
I_G=1.2I_GT
II
V_D = 67 % V_DRM gate open
T_j = 125° C
Without snubber
T_j = 125° C
Max.
Max.
Min.
Max.
Max.
Min.
Min.
Note 1：minimum I_GT is guaranted at 5% of I_GT max.
Note 2：for both polarities of A2 referenced to A1.
BTB24
CW
BW
35
50
1.3
0.2
50
75
70
80
80
100
500
1000
13
22
单位
Unit
V
A
A
A
A²s
A/μs
V
A
W
℃
℃
℃ /W
℃ /W
单位
Unit
mA
V
V
mA
mA
V/μs
A/ms
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