BTB20 Datasheet, PDF (2/7 Pages) Unisonic Technologies – 20A TRIACS

BTB20
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Repetitive peak off-state voltages
On-state rms current(full sine wave
T_C=70℃)
Non repetitive surge peak on-state
current(full cycle, T_j initial = 25 °C)
Non repetitive surge peak on-state
current(full cycle, T_j initial = 25 °C)
I^2t value for fusing
Critical rate of rise of on-state current
I_G =2xI_GT, t_r≤100 ns（F=50Hz T_j=125℃）
Critical rate of rise of on-state current
I_G =2xI_GT, t_r≤100 ns（T_j=125℃）
Non repetitive peak off-state
Voltage(t_p = 10 ms T_j = 25° C)
Peak gate current(t_p =20μs T_j=125℃)
Peak positive gate voltage(t_p =20μs)
Average gate power dissipation(T_j=125℃)
Operating junction temperature range
Storage junction temperature range
Junction to ambient
Junction to case for AC
Junction to case for DC
符号
Symbol
V_DRM/V_RRM
I_T(RMS)
I_TSM(F=50Hz
t=10ms)
I_TSM(F=60Hz
t=8.3ms)
I²t_(tp=10ms)
dI/dt
V_DSM/V_RSM
I_GM
V_GM
P_G(AV)
T_j
T_stg
R_th(j-a)
R_th(j-c)
R_th(j-c)
电性能参数 / Electrical Characteristics(Ta=25℃)
符号
Symbol
I_GT(1)
V_GT
V_GD
I_H(2)
I_L
dV/dt ⁽²⁾
(dV /dt)c ⁽²⁾
测试条件
Test Conditions
信号区
Quadrant
ALL
V_D=12V R_L=33Ω
ALL
V_D=V_DRM R_L=3.3KΩ
T_j=125℃
ALL
I_T=500mA，gate open
I-III
I_G=1.2I_GT
II
I- II -III
V_D = 67 % V_DRM ，gate open
T_j = 125° C
(dI/dt)c = 20A/ms T_j = 125° C
Min.
Max.
Max.
Min.
Max.
Typ.
Max.
Typ.
Min.
Typ.
Min.
Note 1：minimum I_GT is guaranted at 5% of I_GT max.
Note 2：for both polarities of A2 referenced to A1.
http://www.fsbrec.com
DATA SHEET
数值
Rating
600/700
20
210
200
200
50
100
V_DRM/V_RRM
+ 100
4.0
16
1.0
-40～125
-40～150
60
2.1
2.8
单位
Unit
V
A
A
A
A²s
A/μs
V
A
V
W
℃
℃
℃ /W
BTB20
BW
CW
2.0
1.0
50
35
1.5
0.2
75
50
50
-
90
-
-
80
750
500
500
250
36
22
18
11
单位
Unit
mA
V
V
mA
mA
V/μs
V/μs
2/7