BTB12 Datasheet, PDF (2/8 Pages) Unisonic Technologies – 12A TRIACS

BTB12
Rev.D Nov.-2015
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Repetitive peak off-state voltages
RMS on-state current(full sine wave
T_C=90℃)
Non repetitive surge peak on-state
current(full cycle, T_j initial = 25 °C)
Non repetitive surge peak on-state
current(full cycle, T_j initial = 25 °C)
I^2t value for fusing
Critical rate of rise of on-state current
I_G =2xI_GT, t_r≤100 ns（F=120Hz T_j=125℃）
Non repetitive surge peak off-state
Voltage(t_p = 10 ms T_j = 25° C)
Peak gate current(t_p =20μs T_j=125℃)
Average gate power dissipation(T_j=125℃)
Operating junction temperature range
Storage junction temperature range
Junction to ambient
Junction to case (AC)
符号
Symbol
V_DRM/V_RRM
I_T(RMS)
I_TSM(F=50Hz
t=20ms)
I_TSM(F=60Hz
t=16.7ms)
I²t_(tp=10ms)
dI/dt
V_DSM/V_RSM
I_GM
P_G(AV)
T_j
T_stg
R_th(j-a)
R_th(j-c)
数值
Rating
600/800
12
120
126
78
50
V_DRM/V_RRM
+ 100
4.0
1.0
-40～125
-40～150
60
2.3
电性能参数 / Electrical Characteristics(Ta=25℃)
免缓冲器和逻辑电平（3 象限） / Snubberless and logic level（3 quadrants)
单位
Unit
V
A
A
A
A²s
A/μs
V
A
W
℃
℃
℃ /W
℃ /W
符号
Symbol
I_GT(1)
测试条件
Test Conditions
V_D=12V R_L=30Ω
信号区
Quadrant
I-II-III
Max.
BTB12
TW SW CW BW
5 10 35 50
单位
Unit
mA
V_GT
V_D=12V R_L=30Ω
V_GD
V_D=V_DRM R_L=3.3KΩ
T_j=125℃
I_H(2)
I_T=100mA
I-II-III
I-II-III
Max.
1.3
V
Min.
0.2
V
Max. 10 15 35 50 mA
I_L
I_G=1.2I_GT
I-III
10 25 50 70
Max.
mA
II
15 30 60 80
dV/dt ⁽²⁾
(dI/dt)c ⁽²⁾
V_D = 67 % V_DRM gate open
T_j = 125° C
(dV/dt)c = 0.1V/μS T_j = 125° C
(dV/dt)c = 10V/μS T_j = 125° C
Min. 20 40 500 1000 V/μs
Min. 3.5 6.5
Min. 1.0 2.9
A/mS
Without snubber
T_j = 125° C
Min.
6.5 12
Note 1：minimum I_GT is guaranted at 5% of I_GT max.
Note 2：for both polarities of A2 referenced to A1.
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