|
BTB08D Datasheet, PDF (2/8 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Triac in a TO-252 Plastic Package | |||
|
◁ |
BTB08D
Rev.E May.-2016
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Repetitive peak off-state voltages
RMS on-state current(full sine wave
TC=105â)
Non repetitive surge peak on-state
current(full cycle, Tj initial=25°C)
Non repetitive surge peak on-state
current(full cycle, Tj initial=25°C)
I2t Value for fusing
Critical rate of rise of on-state current IG
=2xIGT tr â¤100 nsï¼F=120Hz Tj=125âï¼
Peak gate current(tp =20μs Tj=125â)
Average gate power dissipation(Tj=125â)
Operating junction temperature range
Storage junction temperature range
Junction to ambient
Junction to case (AC)
符å·
Symbol
VDRM/VRRM
IT(RMS)
ITSM(F=50Hz
t=20ms)
ITSM(F=60Hz
t=16.7ms)
I2t(tp=10ms)
dI/dt
IGM
PG(AV)
Tj
Tstg
Rth(j-a)
Rth(j-c)
DATA SHEET
æ°å¼
Rating
600 and 800
8.0
80
84
36
50
4.0
1.0
-40ï½125
-40ï½150
60
2.5
åä½
Unit
V
A
A
A
A2s
A/μs
A
W
â
â
â /W
â /W
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
å
ç¼å²å¨åé»è¾çµå¹³ï¼3象éï¼ / Snubberless and logic levelï¼3 quadrants)
符å·
Symbol
IGT(1)
VGT
VGD
IH(2)
IL
(dV/dt)(2)
(dI/dt)c(2)
æµè¯æ¡ä»¶
ä¿¡å·åº
Test Conditions
Quadrant
VD=12V RL=30â¦
I-II-III
VD=12V RL=30â¦
VD=VDRM RL=3.3Kâ¦
Tj=125â
I-II-III
I-II-III
IT=100mA
I-III
IG=1.2IGT
II
VD=67% VDRM gate open Tj=125â
(dV/dt)c=0.1V/μs Tj=125â
(dV/dt)c=10V/μs Tj=125â
Without snubber Tj=125â
Max.
Max.
Min.
Max.
Max.
Min.
Min.
Min.
Min.
Note 1ï¼minimum IGT is guaranted at 5% of IGT max.
Note 2ï¼for both polarities of A2 referenced to A1.
BTB08D
åä½
TW SW CW BW Unit
5
10 35 50 mA
1.3
V
0.2
V
10 15 35 50 mA
10 25 50 70
mA
15 30 60 80
20 40 400 1000 V/μs
3.5 5.4
-
-
1.5 2.98 -
- A/m s
-
-
4.5
7
http://www.fsbrec.com
2/8
|
▷ |