BTA16F Datasheet, PDF (2/8 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Triac in a TO-220F Plastic Package

BTA16F
Rev.E Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Repetitive peak off-state voltages
On-state rms current(full sine wave
T_C=86℃)
Non repetitive surge peak on-state
current(full cycle, T_j initial = 25 °C)
Non repetitive surge peak on-state
current(full cycle, T_j initial =25°C)
I^2t value for fusing
Critical rate of rise of on-state current
I_G =2xI_GT, t_r≤100 ns（F=120Hz T_j=125℃）
Non repetitive surge peak off-state
Voltage(t_p = 10 ms T_j =25°C)
Peak gate current(t_p =20μs T_j=125℃)
Average gate power dissipation(T_j=125℃)
Maximum operating Junction
Temperature
Storage Temperature Range
Junction to ambient
Junction to case (AC)
符号
Symbol
V_DRM/V_RRM
I_T(RMS)
I_TSM(F=50Hz
t=20ms)
I_TSM(F=60Hz
t=16.7ms)
I²t_(tp=10ms)
dI/dt
V_DSM/V_RSM
I_GM
P_G(AV)
T_j
T_stg
R_th(j-a)
R_th(j-c)
数值
Rating
600/800
16
160
168
144
50
V_DRM/V_RRM
+ 100
4.0
1.0
-40～125
-40～150
60
2.1
电性能参数 / Electrical Characteristics(Ta=25℃)
免缓冲器和逻辑电平（3 象限） / Snubberless and logic level（3 quadrants)
单位
Unit
V
A
A
A
A²s
A/μs
V
A
W
℃
℃
℃ /W
℃ /W
符号
Symbol
I_GT(1)
V_GT
V_GD
I_H(2)
I_L
dV/dt ⁽²⁾
(dI/dt)c ⁽²⁾
测试条件
信号区
Test Conditions
Quadrant
V_D=12V R_L=33Ω
I-II-III
V_D=12V R_L=33Ω
V_D=V_DRM R_L=3.3KΩ
T_j=125℃
I-II-III
I-II-III
I_T=500mA
I-III
I_G=1.2I_GT
II
V_D = 67 % V_DRM gate open
T_j = 125° C
(dV/dt)c = 0.1V/μS T_j = 125° C
(dV/dt)c = 10V/μS T_j = 125° C
Without snubber
T_j = 125° C
Max.
Max.
Min.
Max.
Max.
Min.
Min.
Min.
Min.
Note 1：minimum I_GT is guaranted at 5% of I_GT max.
Note 2：for both polarities of A2 referenced to A1.
BTA16F
SW
CW
BW
10
35
50
1.3
单位
Unit
mA
V
0.2
V
15
35
50
mA
25
50
70
mA
30
60
80
40
500
1000 V/μs
8.5
-
-
3.0
-
-
A/mS
-
8.5
14
http://www.fsbrec.com
2/8