BRM05N50 Datasheet, PDF (2/7 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – N- CHANNEL MOSFET in a SOT-23 Plastic Package

BRM05N50
Rev.D Nov.-2015
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Drain-Source Voltage
Drain Current - Continuous
Drain Current - Continuous
Drain Current- Pulsed
Gate-Source Voltage
Avalanche Current
Power Dissipation
Operating and Storage Temperature Range
符号
Symbol
V_DSS
I_D(Tc=25℃)
I_D(Tc=100℃)
I_DM
V_GSS
I_AR
P_D
T_J,T_STG
数值
Rating
500
0.5
0.4
2
±30
0.5
0.5
-55~150
单位
Unit
V
A
A
A
V
A
W
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage.
Gate Threshold Voltage
Static Drain–Source
On–Resistance
Drain-Source Diode Forward
Voltage
Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
符号
Symbol
BV_DSS
I_DSS
I_GSS
V_GS(th)
R_DS(on)
V_SD
T_rr
Q_rr
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
测试条件
Test Conditions
最小值 典型值 最大值 单位
Min Typ Max Unit
V_GS=0V
I_DS=250μA 500
V
V_DS=500V
V_DS=400V
V_GS=0V
T_C=125℃
1.0 μA
100 μA
V_GS=±30V V_DS=0V
±0.1 μA
V_DS= V_GS I_DS=250μA 2.0
4.0 V
V_GS=10V I_D=0.25A
30 Ω
V_GS=0V
I_F=0.5A
I_DS=0.5A
d_SD/dt=100A/_μs
V_DS=0V
V_GS=25V
f=1.0MHz
I_DS=0.5
R_G=25Ω
AV_GEN=10V
V_DD=225V R_L=30Ω
1.5 V
102
ns
0.26
μC
185 240 pF
29 40 pF
6.5 8.5 pF
7.5 25 ns
21 50 ns
23 55 ns
36 80 ns
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