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| BRF16N50 Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – N-CHANNEL MOSFET in a TO-220FL Plastic Package | |||
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BRF16N50
Rev.D Nov.-2015
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Drain-Source Voltage
Drain Current
Drain Current
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
Power Dissipation
Operating and Storage Temperature Range
符å·
Symbol
VDSS
ID(Tc=25â)
ID(Tc=100â)
IDM
VGSS
EAS
EAR
IAR
PD(Tc=25â)
TJ,TSTG
DATA SHEET
æ°å¼
Rating
500
16
9.6
64
±30
780
20
16
38.5
-55 to 150
åä½
Unit
V
A
A
A
V
mJ
mJ
A
W
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Drain-Source Diode Forward
Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
符å·
Symbol
æµè¯æ¡ä»¶
Test Conditions
BVDSS VGS=0V
ID=250μA
VDS=500V VGS=0V
IDSS VDS=400V TC=125â
IGSS VGS=±30V VDS=0V
VGS(th) VDS=VGS
ID=250μA
RDS(on) VGS=10V ID=8.0A
gFS VDS=40V ID=8.0A
VSD VGS=0V
IS=16A
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=25V
f=1.0MHz
VDD=250V
RG=25â¦
VGS=0V
ID=16A
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
500
V
1.0 μA
10 μA
±100 nA
3.0
5.0 V
0.31 0.38 â¦
23
S
1.4 V
1495 1945
235 310 pF
20 30
40 90
150 310
ns
65 140
80 170
http://www.fsbrec.com
2/6
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