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| BRF10N65 Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – N-CHANNEL MOSFET in a TO-220FL Plastic Package | |||
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BRF10N65
Rev.D Nov.-2015
DATA SHEET
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Drain-Source Voltage
Drain Current
Drain Current
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Power Dissipation
Operating and Storage Temperature Range
符å·
Symbol
VDSS
ID(Tc=25â)
ID(Tc=100â)
IDM
VGSS
EAS
EAR
IAR
RθJC
RθJA
PD(Tc=25â)
TJ,TSTG
æ°å¼
Rating
650
9.5
5.7
38
±20
700
15.6
9.5
2.5
62.5
156
-55 to 150
åä½
Unit
V
A
A
A
V
mJ
mJ
A
â /W
â /W
W
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Drain-Source Diode Forward
Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
符å·
æµè¯æ¡ä»¶
Symbol
Test Conditions
BVDSS VGS=0V
ID=250μA
IDSS
VDS=600V
VDS=480V
VGS=0V
TC=125â
IGSS VGS=±20V VDS=0V
VGS(th) VDS=VGS
ID=250μA
RDS(on) VGS=10V ID=4.75A
gFS VDS=40V ID=4.75A
VSD VGS=0V
IS=9.5A
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=25V
f=1.0MHz
VDD=300V
RG=25â¦
VGS=0V
ID=9.5A
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
650
V
1.0 μA
10 μA
±10 μA
2.0
4.0 V
0.75 0.85 â¦
8.0
S
1.4 V
1570 2040 pF
166 215 pF
18 24 pF
23 55 ns
69 150 ns
144 300 ns
77 165 ns
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2/6
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