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| BRB7N80 Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – N-CHANNEL MOSFET in a TO-263 Plastic Package | |||
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BRB7N80
Rev.D May.-2016
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Drain-Source Voltage
Drain Current
Drain Current
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
Power Dissipation
Operating and Storage Temperature Range
符å·
Symbol
VDSS
ID(Tc=25â)
ID(Tc=100â)
IDM
VGS
EAS
EAR
IAR
PD(Tc=25â)
TJ,TSTG
DATA SHEET
æ°å¼
Rating
800
7.0
4.2
26.4
±30
580
16.7
6.6
56
-55 to 150
åä½
Unit
V
A
A
A
V
mJ
mJ
A
W
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Drain-Source Diode Forward
Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
符å·
Symbol
BVDSS
IDSS
æµè¯æ¡ä»¶
Test Conditions
VGS=0V
ID=250μA
VDS=800V VGS=0V
VDS=640V TC=125â
IGSS VGS=±30V VDS=0V
VGS(th) VDS=VGS
ID=250μA
RDS(on) VGS=10V ID=3.5A
gFS VDS=50V ID=3.5A
VSD VGS=0V
IS=7.0A
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=25V VGS=0V
f=1.0MHz
VDD=400V ID=7.0A
RG=25â¦
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
800
V
10 μA
100 μA
±0.1 μA
3.0
5.0 V
1.57 1.9 â¦
5.5
S
1.4 V
1290 1680 pF
120 155 pF
10 13 pF
35 80 ns
100 200 ns
50 110 ns
60 130 ns
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2/6
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