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| BR70N06 Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – N-CHANNEL MOSFET in a TO-220 Plastic Package | |||
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BR70N06
Rev.D Nov.-2015
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Drain-Source Voltage
Drain Current
Drain Current
Peak Drain Current
Gate-Source Voltage
Repetitive Avalanche Energy
Repetitive Avalanche Energy
Power Dissipation
Junction and Storage Temperature Range
符å·
Symbol
VDSS
ID(Tc=25â)
ID(Tc=100â)
IDM
VGSS
EAS
EAR
PD(Tc=25â)
TJ,TSTG
DATA SHEET
æ°å¼
Rating
60
70
48
280
±20
756
16.2
162
-55 to 150
åä½
Unit
V
A
A
A
V
mJ
mJ
W
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
符å·
Symbol
æµè¯æ¡ä»¶
Test Conditions
Drain-Source Breakdown Voltage BVDSS VGS=0V
ID=250μA
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward
VDS=64V VGS=0V
IDSS VDS=48V
VGS=0V
TC=125â
IGSS VGS=±20V VDS=0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th) VDS=VGS
RDS(on) VGS=10V
ID=250μA
ID=35A
Forward On Voltage
VSD VGS=0V
IS=70A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS=0V
f=1.0MHz
VDS=25V
Turn-On Delay Time
td(on)
Turn-On Rise Time
Turn-Off Delay Time
tr
td(off)
ID=35A
RG=25â¦
VDD=30V
Turn-Off Fall Time
tf
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
60
V
10 μA
100 μA
±0.1 μA
2.0
4.0 V
12.5 15.0 mâ¦
1.5 V
1755 2280 pF
790 1030 pF
155 200 pF
25
60 ns
135 280 ns
115 240 ns
105 220 ns
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