BFR93A Datasheet, PDF (2/6 Pages) NXP Semiconductors – NPN 6 GHz wideband transistor

BFR93A
Rev.F Apr.-2017
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
DATA SHEET
数值
Rating
15
12
2.0
35
300
150
-55～150
单位
Unit
V
V
V
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
V_CBO I_C=100μA I_E=0
V_CEO I_C=500μA I_B=0
Emitter to Base Breakdown Voltage V_EBO I_E=100μA I_C=0
Collector Cut-Off Current
I_CBO V_CB=5.0 V I_E=0
DC Current Gain
Collector Capacitance
Emitter Capacitance
Feedback Capacitance
Transition Frequency
Maximum Unilateral Power Gain
h_FE V_CE=5.0V I_C=30mA
C_c
I_E=0
V_CB=5.0V
f=1.0MHz
C_e
V_EB=0.5V I_C=0
f=1.0MHz
C_re
V_CE=5.0V I_C=0
T_amb=25℃ f=1.0MHz
f_T
I_C=30mA V_CE=5.0V
f=500MHz
I_C=30mA V_CE=8.0V
G_UM
f=1.0GHz
I_C=30mA
T_amb=25℃
V_CE=8.0V
f=2.0GHz T_amb=25℃
最小值 典型值 最大值 单位
Min Typ Max Unit
15
V
12
V
2.0
V
0.05 μA
40 90
0.7
pF
1.9
pF
0.6
pF
4.5
6.0
GHz
13
dB
7.0
dB
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