BF821 Datasheet, PDF (2/6 Pages) NXP Semiconductors – PNP high-voltage transistors

BF821
Rev.F Apr.-2017
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Peak Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
P_C
T_j
T_stg
DATA SHEET
数值
Rating
-300
-300
-5.0
-50
-100
-50
250
150
-55～150
单位
Unit
V
V
V
mA
mA
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
符号
Symbol
V_CBO
V_CEO
V_EBO
测试条件
Test Conditions
I_C=-100μA I_E=0
I_C=-1.0mA I_B=0
I_E=-100μA I_C=0
Collector Cut-Off Current
I_CBO V_CB=-200V I_E=0
Emitter Cut-Off Current
I_EBO V_EB=-5.0V I_C=0
DC Current Gain
Collector to Emitter Saturation
Voltage
Feedback Capacitance
Transition Frequency
h_FE
V_CE(sat)
C_re
f_T
V_CE=-20V
I_C=-30mA
V_CB=-30V
f=1.0MHz
V_CE=-10V
f=100MHz
I_C=-25mA
I_B=-5.0mA
I_E=0
I_C=-10mA
*脉冲测试：脉宽≤300μS，占空比≤2.0%。
*pulse test: pulse width≤300μS,duty cycle≤2.0%.
最小值
Min
-300
-300
-5.0
50
60
典型值 最大值 单位
Typ Max Unit
V
V
V
-0.01 μA
-0.05 μA
-0.8 V
1.6 pF
MHz
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