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| BC869 Datasheet, PDF (2/6 Pages) NXP Semiconductors – PNP medium power transistor | |||
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BC869
Rev.E Mar.-2016
DATA SHEET
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current-Continuous
Peak Collector Current
Peak Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
PC
Tj
Tstg
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
æ°å¼
Rating
-32
-20
-5.0
-1.0
-2.0
-200
1.35
150
-55ï½150
åä½
Unit
V
V
V
A
A
mA
W
â
â
åæ°
Parameter
Collector Cut-Off Current
Emitter Base Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Voltage
Transition Frequency
符å·
Symbol
æµè¯æ¡ä»¶
Test Conditions
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
ICBO VCB=-25V IE=0
-0.1 μA
IEBO VEB=-5.0V IC=0
-0.1 μA
hFE(1) VCE=-1.0V IC=-500mA 100
375
hFE(2) VCE=-10V IC=-5.0mA 50
hFE(3) VCE=-1.0V IC=-1.0A
60
VCE(sat) IC=-1.0A
IB=-100mA
-500 mV
VBE(1)
VBE(2)
fT
IC=-5.0mA
IC=-1.0A
VCE=-5.0V
f=100MHZ
VCE=-10V
VCE=-1.0V
IC=-10mA
-620
mV
-1.0 V
40
MHz
http://www.fsbrec.com
2/6
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