BC868 Datasheet, PDF (2/6 Pages) NXP Semiconductors – NPN medium power transistor

BC868
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current-Continuous
Peak Collector Current
Peak Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_C
T_j
T_stg
DATA SHEET
数值
Rating
32
20
5.0
1.0
2.0
200
1.35
150
-55～150
单位
Unit
V
V
V
A
A
mA
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector Cut-Off Current
Emitter Base Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Voltage
Transition Frequency
符号
Symbol
测试条件
Test Conditions
I_CBO V_CB=25V I_E=0
I_EBO V_EB=5.0V I_C=0
h_FE(1) V_CE=1.0V I_C=500mA
h_FE(2) V_CE=10V I_C=5.0mA
h_FE(3) V_CE=1.0V I_C=1.0A
V_CE(sat) I_C=1.0A
I_B=100mA
V_BE(1)
V_BE(2)
f_T
V_CE=10V
V_CE=1.0V
V_CE=5.0V
f=100MH_Z
I_C=5.0mA
I_C=1.0A
I_C=10mA
最小值 典型值 最大值 单位
Min Typ Max Unit
0.1 μA
0.1 μA
85
375
50
60
500 mV
620
mV
1.0 V
40
MHz
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