BC860 Datasheet, PDF (2/6 Pages) American Microsemiconductor – Amplifiers & Switches

BC860
Rev.F Apr.-2017
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
DATA SHEET
数值
Rating
-50
-45
-5.0
-100
350
150
-55～150
单位
Unit
V
V
V
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Emitter Breakdown
Voltage
Collector to Base Breakdown
Voltage
Emitter to Base Breakdown
Voltage
符号
Symbol
V_CEO
V_CBO
V_EBO
测试条件
Test Conditions
I_C=-10mA I_B=0
I_C=-10μA I_E=0
I_E=-10μA I_C=0
Collector Cut-Off Current
I_CBO V_CB=-30V I_E=0
DC Current Gain
h_FE V_CE=-5.0V I_C=-2.0mA
Collector to Emitter Saturation ^{VCE(sat)(1) IC=-10mA IB=-0.5mA}
Voltage
V_CE(sat)(2) I_C=-100mA I_B=-5.0mA
Base to Emitter Saturation
Voltage
V_BE(sat)(1) I_C=-10mA I_B=-0.5mA
V_BE(sat)(2) I_C=-100mA I_B=-5.0mA
Base to Emitter Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
V_BE(1)
V_BE(2)
f_T
C_ob
NF
V_CE=-5.0V
V_CE=-5.0V
V_CE=-5.0V
f=100MHz
V_CB=-10V
f=1.0MHz
V_CE=-5.0V
R_g=10KΩ
I_C=-2.0mA
I_C=-10mA
I_C=-10mA
I_E=0
I_C=-200μA
f=1.0KHz
最小值
Min
-45
-50
-5.0
125
-0.6
典型值 最大值 单位
Typ Max Unit
V
V
V
-0.015 μA
800
-0.075 -0.3 V
-0.25 -0.65 V
-0.7
V
-0.85
V
-0.65 -0.75 V
-0.82 V
150
MHz
4.5
pF
4.0 dB
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