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BC859 Datasheet, PDF (2/6 Pages) NXP Semiconductors – PNP general purpose transistors | |||
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BC859
Rev.F Apr.-2017
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
DATA SHEET
æ°å¼
Rating
-30
-30
-5.0
-100
350
150
55ï½150
åä½
Unit
V
V
V
mA
mW
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
Collector to Emitter Breakdown
Voltage
Collector to Base Breakdown
Voltage
Emitter to Base Breakdown
Voltage
符å·
Symbol
VCEO
VCBO
VEBO
æµè¯æ¡ä»¶
Test Conditions
IC=-10mA IB=0
IC=-10μA IE=0
IE=-10μA IC=0
Collector Cut-Off Current
ICBO VCB=-30V IE=0
DC Current Gain
hFE VCE=-5.0V IC=-2.0mA
Collector to Emitter Saturation VCE(sat)(1) IC=-10mA IB=-0.5mA
Voltage
VCE(sat)(2) IC=-100mA IB=-5.0mA
Base to Emitter Saturation
Voltage
VBE(sat)(1) IC=-10mA IB=-0.5mA
VBE(sat)(2) IC=-100mA IB=-5.0mA
Base to Emitter Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
VBE(ON)(1) VCE=-5.0V
VBE(ON)(2)
fT
Cob
NF
VCE=-5.0V
VCE=-5.0V
f=100MHz
VCB=-10V
f=1.0MHz
VCE=-5.0V
Rg=10Kâ¦
IC=-2.0mA
IC=-10mA
IC=-10mA
IE=0
IC=-200μA
f=1.0KHz
æå°å¼
Min
-30
-30
-5.0
125
-0.6
å
¸åå¼ æå¤§å¼ åä½
Typ Max Unit
V
V
V
-0.015 μA
475
-0.075 -0.3 V
-0.25 -0.65 V
-0.7
V
-0.85
V
-0.65 -0.75 V
-0.82 V
150
MHz
4.5
pF
4.0 dB
http://www.fsbrec.com
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