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BC857 Datasheet, PDF (2/6 Pages) STMicroelectronics – SMALL SIGNAL PNP TRANSISTORS
BC857
Rev.F Apr.-2017
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
DATA SHEET
数值
Rating
-50
-45
-5.0
-100
350
150
-55~150
单位
Unit
V
V
V
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
符号
Symbol
测试条件
Test Conditions
Collector Cut-Off Current
ICBO VCB=-30V IE=0
DC Current Gain
hFE VCE=-5.0V IC=-2.0mA
Collector to Emitter Saturation
Voltage
VCE(sat)(1) IC=-10mA IB=-0.5mA
VCE(sat)(2) IC=-100mA IB=-5.0mA
VBE(sat)(1) IC=-100mA IB=-0.5mA
Base to Emitter Saturation Voltage
VBE(sat)(2) IC=-10mA IB=-5.0mA
Collector to Emitter Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
VCE(ON)(1) VCE=5.0V
VCE(ON)(2) VCE=5.0V
fT
VCE=5.0V
f=100MHz
Cob
VCB=10V
f=1.0MHz
NF
VCE=6.0V
Rg=10KΩ
IC=2.0mA
IC=10mA
IC=10mA
IE=0
IC=0.1mA
f=1.0KHz
最小值 典型值 最大值 单位
Min Typ Max Unit
-0.015 μA
125
800
-0.09 -0.3 V
-0.25 -0.65 V
-0.7
V
-0.9
V
-0.6 -0.65 -0.75 V
-0.82 V
150
MHz
4.5
pF
2.0 10 dB
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