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| BC856W Datasheet, PDF (2/6 Pages) NXP Semiconductors – PNP general purpose transistors | |||
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BC856W
Rev.E Mar.-2016
DATA SHEET
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Peak Collector Current - Continuous
Peak Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
PC
Tj
Tstg
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
æ°å¼
Rating
-80
-65
-5.0
-100
-200
-200
200
150
-55ï½150
åä½
Unit
V
V
V
mA
mA
mA
mW
â
â
åæ°
Parameter
Collector Cut-Off Current
Emitter to Base Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation
Voltage
Base to Emitter Voltage
Transition Frequency
Collector Capacitance
Emitter Capacitance
Noise Figure
符å·
Symbol
æµè¯æ¡ä»¶
Test Conditions
ICBO VCB=-30V IE=0
IEBO VEB=-5.0V IC=0
hFE VCE=-5.0V IC=-2.0mA
VCE(sat)(1) IC=-10mA IB=-0.5mA
VCE(sat)(2) IC=-100mA IB=-5.0mA
VBE(sat)(1) IC=-10mA IB=-0.5mA
VBE(sat)(2) IC=-100mA IB=-5.0mA
VBE(1) VCE=-5.0V IC=-2.0mA
VBE(2)
fT
CC
Ce
VCE=-5.0V
VCE=-5.0V
f=100MHz
VCB=-10V
f=1.0MHz
VEB=-0.5V
f=1.0MHz
IC=-10mA
IC=-10mA
IE=Ie=0
IC=Ic=0
IC=-200μA VCE=-5.0V
NF RS=2Kâ¦
f=1.0KHZ
B=200HZ
æå°å¼ å
¸åå¼ æ大å¼
Min Typ Max
-0.015
-0.1
125
475
-0.075 -0.3
-0.25 -0.6
-0.7
-0.85
-0.6 -0.65 -0.75
-0.82
åä½
Unit
μA
μA
V
V
V
V
V
V
100
MHz
3.0
pF
12
pF
10
dB
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