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| BC846W Datasheet, PDF (2/6 Pages) NXP Semiconductors – NPN general purpose transistors | |||
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BC846W
Rev.E Mar.-2016
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Peak Collector Current - Continuous
Peak Collector Base - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
PC
Tj
Tstg
DATA SHEET
æ°å¼
Rating
80
65
6.0
100
200
200
200
150
-55ï½150
åä½
Unit
V
V
V
mA
mA
mA
mW
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
Collector Cut-Off Current
Emitter Base Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation
Voltage
Base to Emitter Voltage
Transition Frequency
Collector Capacitance
Noise Figure
符å·
Symbol
æµè¯æ¡ä»¶
Test Conditions
ICBO VCB=30V IE=0
IEBO VEB=5.0V IC=0
hFE(1) VCE=5.0V IC=2.0mA
hFE(2) VCE=5.0V IC=10μA
VCE(sat)(1) IC=10mA
IB=0.5mA
VCE(sat)(2) IC=100mA IB=5.0mA
VBE(sat)(1) IC=10mA
IB=0.5mA
VBE(sat)(2) IC=100mA IB=5.0mA
VBE(1) VCE=5.0V IC=2.0mA
VBE(2)
fT
CC
NF
VCE=5.0V
VCE=5.0V
f=100MHz
VCB=10V
f=1.0MHz
IC=200μA
RS=2Kâ¦
B=200HZ
IC=10mA
IC=10mA
IE=ie=0
VCE=5.0V
f=1.0KHZ
æå°å¼ å
¸åå¼ æ大å¼
Min Typ Max
0.015
0.1
110
450
90
0.09 0.25
0.2 0.6
0.7
0.9
0.58 0.66 0.7
0.77
åä½
Unit
μA
μA
V
V
V
V
V
V
100
MHz
3.0
pF
10
dB
http://www.fsbrec.com
2/6
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