BC549 Datasheet, PDF (2/6 Pages) NXP Semiconductors – NPN general purpose transistors

BC549
Rev.E Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
电性能参数 / Electrical Characteristics(Ta=25℃)
数值
Rating
30
30
5.0
100
500
150
-55～150
单位
Unit
V
V
V
mA
mW
℃
℃
参数
Parameter
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain Bandwidth Product
Transition Frequency
Input Capacitance
Noise Figure
符号
Symbol
测试条件
Test Conditions
I_CBO V_CB=30V I_E=0
h_FE V_CE=5.0V I_C=2.0mA
I_C=100mA
V_CE(sat)
I_C=10mA
I_B=5.0mA
I_B=0.5mA
I_C=100mA
V_BE(sat)
I_C=10mA
I_B=5.0mA
I_B=0.5mA
V_BE(on)
f_T
C_ob
C_ib
NF
V_CE=5.0V
V_CE=5.0V
V_CE=5.0V
f=100MHz
V_CB=10V
f=1.0MHz
V_EB=0.5V
f=1.0MHz
V_CE=5.0V
R_g=2.0KΩ
I_C=2.0mA
I_C=10mA
I_C=10mA
I_E=0
I_C=0
I_C=0.2mA
f=1.0KHz
最小值 典型值
Min Typ
最大值
Max
0.015
单位
Unit
μA
110
800
0.2
0.6
V
0.09 0.25 V
0.9
V
0.7
V
0.58 0.66 0.7
V
0.72 V
300
MHz
3.5
6.0 pF
9.0
pF
1.4
4
dB
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