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BC337M Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon NPN transistor in a SOT-23 Plastic Package
BC337M
Rev.F Apr.-2017
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Emitter - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
DATA SHEET
数值
Rating
50
45
5.0
800
-800
300
150
-55~150
单位
Unit
V
V
V
mA
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Voltage
Transition Frequency
Collector Output Capacitance
符号
Symbol
ICBO
hFE
VCE(sat)
VBE
fT
Cob
测试条件
Test Conditions
VCB=45V  IE=0
VCE=1.0V  IC=100mA
IC=500mA  IB=50mA
VCE=1.0V 
VCE=5.0V
f=100MHz
VCB=10V 
IC=300mA
IC=10mA
f=1.0MHz
最小值
Min
100
典型值 最大值 单位
Typ Max Unit
0.1 μA
600
0.7 V
1.2 V
100
MHz
12
pF
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