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| BC184 Datasheet, PDF (2/6 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTORS | |||
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BC184
Rev.E Mar.-2016
DATA SHEET
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
PC
PC(Tc=25â )
Tj
Tstg
æ°å¼
Rating
45
30
6.0
100
350
1.0
150
-55ï½150
åä½
Unit
V
V
V
mA
mW
W
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
符å·
Symbol
æµè¯æ¡ä»¶
Test Conditions
VCBO IC=10μA
IE=0
VCEO IC=2.0mA IB=0
VEBO IE=100μA IC=0
Collector Cut-Off Current
ICBO VCB=30V IE=0
Emitter Cut-Off Current
IEBO VEB=4.0V IC=0
hFE(1) VCE=5.0V IC=2.0mA
DC Current Gain
hFE(2) VCE=5.0V IC=10μA
hFE(3) VCE=5.0V IC=100mA
Collector to Emitter Saturation
Voltage
VCE(sat)(1) IC=10mA
VCE(sat)(2) IC=100mA
IB=0.5mA
IB=5.0mA
Base to Emitter Saturation Voltage VBE(sat) IC=100mA IB=5.0mA
Base to Emitter Voltage
VBE VCE=5.0V IC=2.0mA
Transition Frequency
fT
IC=10mA VCE=5.0V
f=100 MHz
Collector output capacitance
Cob
VCB=10V
f=1.0MHz
IC=0
Common Base Input Capacitance
Cib
VEB=0.5V IC=0
f=1.0MHz
SmallâSignal Current Gain
hfe
IC=2.0mA
f=1.0MHz
VCE=5.0V
Noise Figure
NF
IC=0.2mA VCE=5.0V
RS=2.0 K⦠f=1.0MHz
æå°å¼ å
¸åå¼ æ大å¼
Min Typ Max
45
30
6.0
0.0002 0.015
0.015
250
800
100
130
0.07 0.25
0.2
0.6
1.2
0.55 0.62 0.7
150 280
5.0
8.0
240
900
2.0
4.0
åä½
Unit
V
V
V
μA
μA
V
V
V
V
MHz
pF
pF
dB
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