BAS70 Datasheet, PDF (2/6 Pages) NXP Semiconductors – Schottky barrier double diodes

BAS70-04/05/06
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Repetitive Reverse Voltage
Average Rectified Forward Current
Repetitive Peak Forward Surge Current
Non-repetitive Peak Forward Surge Current
Junction Temperature
Storage Temperature Range
符号
Symbol
V_R
I_F
I_FRM
I_FSM
T_j
T_stg
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Forward Voltage
Instantaneous Reverse Current
Total Capacitance
符号
Symbol
测试条件
Test Conditions
I_F=1mA
V_F I_F=10mA
I_F=15mA
V_R=50V
I_R
V_R=70V
C_T V_R=0
f=1MHz
DATA SHEET
数值
Rating
70
70
70
100
150
-55～150
单位
Unit
V
mA
mA
mA
℃
℃
最小值 典型值 最大值 单位
Min Typ Max Unit
410 mV
750 mV
1
V
0.1 μA
10 μA
2 pF
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