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| AO3420 Datasheet, PDF (2/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor | |||
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AO3420
Rev.E Mar.-2016
DATA SHEET
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Drain-Source Voltage
Drain Current â Continuous
Drain Current- Continuous
Pulsed Drain Current
Gate-Source Voltage
Total Power Dissipation
Total Power Dissipation
Operating and Storage Junction Temperature
Range
符å·
Symbol
VDS
ID
ID(Ta=70â)
IDM
VGS
PD
PD(Ta=70â)
TJ, TSTG
æ°å¼
Rating
20
6
5
25
±12
1.4
0.9
-55 to 150
åä½
Unit
V
A
A
A
V
W
W
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
DrainâSource Breakdown Voltage
符å·
Symbol
BVDSS
Zero Gate Voltage Drain Current
IDSS
GateâBody Leakage.
OnâState Drain Current
Gate Threshold Voltage
Static DrainâSource
OnâResistance
Forward Transconductance
DrainâSource Diode Forward
Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
TurnâOn Delay Time
TurnâOn Rise Time
TurnâOff Delay Time
TurnâOff Fall Time
IGSS
ID(on)
VGS(th)
RDS(on)1
RDS(on)2
RDS(on)3
gFS
VSD
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
æµè¯æ¡ä»¶
Test Conditions
VGS=0V
ID=250μA
VDS=16V
VDS=16V
TJ=55â
VGS=±12V
VGS=0V
VGS=0V
VDS=0V
VGS=4.5V VDS=5V
VDS=VGS
ID=250μA
VGS=10V
VGS=10V
TJ=125â
VGS=4.5V
ID=6A
ID=6A
ID=5A
VDS=5V
ID=3.8A
VGS=0V
IS=1A
VDS=10V
f=1MHz
VGS=0V
VGS=5V
VDS=10V
RL=1.7â¦
RGEN=6â¦
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
20
V
1.0 μA
5.0 μA
±0.1 μA
25
A
0.5 0.7 1
V
19 24
29 35 mâ¦
22 27
24
S
0.75 1
V
630
164
pF
137
5.5
14
ns
29
10.2
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