AO3409 Datasheet, PDF (2/7 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO3409
Rev.E Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Drain-Source Voltage
Drain Current – Continuous
Drain Current- Continuous
Pulsed Drain Current
Gate-Source Voltage
Total Power Dissipation
Operating and Storage Junction Temperature
Range
符号
Symbol
V_DS
I_D(T_a=25℃)
I_D(T_a=70℃)
I_DM
V_GS
P_D(T_a=25℃)
P_D(T_a=70℃)
T_J, T_STG
数值
Rating
-30
-2.6
-2.2
-20
±20
1.4
1
-55 to 150
单位
Unit
V
A
A
A
V
W
W
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage.
On–State Drain Current
Gate Threshold Voltage
Static Drain–Source
On–Resistance
Forward Transconductance
Drain–Source Diode Forward
Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
符号
Symbol
BV_DSS
I_DSS
I_GSS
I_D(on)
V_GS(th)
R_DS(on)1
R_DS(on)2
R_DS(on)3
g_FS
V_SD
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
测试条件
Test Conditions
V_GS=0V
I_D=-250_μA
最小值 典型值 最大值
Min Typ Max
-30
单位
Unit
V
V_DS=-30V
V_DS=-30V
T_J=55℃
V_GS=±20V
V_GS=0V
V_GS=0V
V_DS=0V
V_GS=-10V V_DS=-5V
-20
V_DS=V_GS
I_D=-250_{μA -1.4}
-1.0 μA
-5.0 μA
±0.1 μA
A
-2.4 V
V_GS=-10V
V_GS=-10V
T_J=125℃
V_GS=-4.5V
V_DS=-5V
I_D=-2.6A
I_D=-2.6A
I_D=-2.0A
I_D=-2.6A
110
140 mΩ
180
4.0 5.0
S
V_GS=0V
I_S=-1.0A
-1.0 V
V_DS=-15V V_GS=0V
f=1.0MHz
300
50 pF
40
10
V_GS=-10V
V_DS=-15V
R_L=5.8Ω
R_GEN=3Ω
8
ns
30
5
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