9015W Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon PNP transistor in a SOT-323 Plastic Package

9015W
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
DATA SHEET
数值
Rating
-50
-45
-5.0
-100
250
150
-55～150
单位
Unit
V
V
V
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
V_CBO I_C=-0.1mA I_E=0
V_CEO I_C=-1.0mA I_B=0
Emitter to Base Breakdown Voltage V_EBO I_E=-0.1mA I_C=0
Collector Cut-Off Current
I_CBO V_CB=-50V I_E=0
Emitter Base Cut-Off Current
I_EBO V_EB=-5.0V I_C=0
DC Current Gain
h_FE V_CE=-5.0V I_C=-1.0mA
Collector-Emitter Saturation Voltage V_CE(sat) I_C=-100mA I_B=-5.0mA
Base-Emitter Saturation Voltage
V_BE(sat) I_C=-100mA I_B=-5.0mA
Collector-Emitter Voltage
V_BE V_CE=-5.0V I_C=-2.0mA
Transition Frequency
Output Capacitance
Noise Figure
f_T V_CE=-5.0V I_C=-10mA
C_ob
V_CB=-10V
f=1.0MHz
I_E=0
V_CE=-5.0V I_C=-0.2mA
NF R_g=2.0KΩ f=1.0KHz
Δf=200Hz
最小值 典型值 最大值 单位
Min Typ Max Unit
-50
V
-45
V
-5.0
V
-0.05 μA
-0.05 μA
60
600
-0.2 -0.7 V
-0.82 -1.0 V
-0.65 -0.75 V
100 190
MHz
4.5 7.0 pF
0.7 10 dB
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