9014W Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon NPN transistor in a SOT-323 Plastic Package

9014W
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
DATA SHEET
数值
Rating
50
45
5.0
100
250
150
-55～150
单位
Unit
V
V
V
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
V_CBO I_C=0.1mA I_E=0
V_CEO I_C=1.0mA I_B=0
最小值 典型值 最大值 单位
Min Typ Max Unit
50
V
45
V
Emitter to Base Breakdown Voltage V_EBO I_E=0.1mA I_C=0
5.0
V
Collector Cut-Off Current
I_CBO V_CB=50V I_E=0
0.05 μA
Emitter Base Cut-Off Current
I_EBO V_EB=5.0V I_C=0
0.05 μA
DC Current Gain
h_FE V_CE=5.0V I_C=1.0mA
60
1000
Collector-Emitter Saturation Voltage V_CE(sat) I_C=100mA I_B=5.0mA
0.14 0.3 V
Base-Emitter Saturation Voltage
V_BE(sat) I_C=100mA I_B=5.0mA
0.84 1.0 V
Collector-Emitter Voltage
V_BE V_CE=5.0V I_C=2.0mA
0.63 0.7 V
Transition Frequency
Output Capacitance
Noise Figure
f_T V_CE=5.0V I_C=10mA
150 270
MHz
C_ob
V_CB=10V
f=1.0MHz
I_E=0
2.2 3.5 pF
V_CE=5.0V I_C=0.2mA
NF R_g=2.0KΩ
f=1.0KHz
Δf=200Hz
0.9 10 dB
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