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9014M Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon NPN transistor in a SOT-23 Plastic Package
9014M
Rev.F Apr.-2017
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
DATA SHEET
数值
Rating
50
45
5.0
100
400
150
-55~150
单位
Unit
V
V
V
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
符号
Symbol
测试条件
Test Conditions
VCBO IC=0.1mA IE=0
VCEO IC=1.0mA IB=0
VEBO IE=0.1mA
ICBO VCB=50V
IEBO VEB=5.0V
hFE VCE=5.0V
VCE(sat) IC=100mA
VBE(sat)
VBE
fT
Cob
NF
IC=100mA
VCE=5.0V
VCE=5.0V
VCB=10V
f=1.0MHz
VCE=5.0V
Rg=2.0KΩ
Δf=200Hz
IC=0
IE=0
IC=0
IC=1.0mA
IB=5.0mA
IB=5.0mA
IC=2.0mA
IC=10mA
IE=0
IC=0.2mA
f=1.0KHz
最小值 典型值 最大值 单位
Min Typ Max Unit
50
V
45
V
5.0
V
0.05 μA
0.05 μA
60
1000
0.14 0.3 V
0.84
0.63
150 270
1.0 V
0.7 V
MHz
2.2 3.5 pF
0.9
10 dB
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