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| 9013M Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon NPN transistor in a SOT-23 Plastic Package | |||
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9013M
Rev.E Apr.-2017
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
DATA SHEET
æ°å¼
Rating
40
20
5.0
500
100
450
150
-55ï½150
åä½
Unit
V
V
V
mA
mA
mW
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation
Voltage
Base-Emitter saturation Voltage
Base-Emitter Voltage
符å·
Symbol
æµè¯æ¡ä»¶
Test Conditions
VCBO IC=0.1mA IE=0
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
40
V
VCEO IC=1.0mA IB=0
20
V
VEBO IE=0.1mA IC=0
5.0
V
ICBO VCB=25V IE=0
IEBO VEB=3.0V IC=0
hFE(1) VCE=1.0V IC=50mA
150
hFE(2) VCE=1.0V IC=500mA 40
0.1 μA
0.1 μA
300
VCE(sat) IC=500mA IB=50mA
0.16 0.6 V
VBE(sat)
VBE
IC=500mA
VCE=1.0V
IB=50mA
IC=10mA
0.91 1.2 V
0.67 0.7 V
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