9011M Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon NPN transistor in a SOT-23 Plastic Package

9011M
Rev.F Apr.-2017
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
数值
Rating
50
30
5.0
30
10
310
150
-55～150
单位
Unit
V
V
V
mA
mA
mW
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation
voltage
Base-Emitter Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
符号
Symbol
测试条件
Test Conditions
V_CBO I_C=0.1mA I_E=0
V_CEO I_C=1.0mA I_B=0
V_EBO I_E=0.1mA
I_CBO V_CB=50V
I_EBO V_EB=5.0V
h_FE V_CE=5.0V
V_CE(sat) I_C=10mA
V_BE V_CE=5.0V
f_T
V_CE=5.0V
C_ob
V_CB=10V
f=1.0MHz
NF
V_CE=5.0V
R_g=500Ω
I_C=0
I_E=0
I_C=0
I_C=1.0mA
I_B=1.0mA
I_C=1.0mA
I_C=1.0mA
I_E=0
I_C=1.0mA
f=1.0MHz
最小值 典型值 最大值 单位
Min Typ Max Unit
50
V
30
V
5.0
V
0.1 μA
0.1 μA
28
198
0.08 0.3 V
0.7 0.75 V
150 370
MHz
1.5
pF
2.0 4.0 dB
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