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| 8050W Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon NPN transistor in a SOT-323 Plastic Package | |||
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8050W
Rev.E Mar.-2016
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
DATA SHEET
æ°å¼
Rating
40
25
5.0
1.5
0.5
200
150
-55ï½150
åä½
Unit
V
V
V
A
A
mW
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
符å·
Symbol
æµè¯æ¡ä»¶
Test Conditions
VCBO IC=0.1mA IE=0
VCEO IC=2.0mA IB=0
Emitter to Base Breakdown Voltage VEBO IE=0.1mA IC=0
Collector Cut-Off Current
ICBO VCB=35V IE=0
Emitter Base Cut-Off Current
IEBO VEB=6.0V IC=0
hFE(1) VCE=1.0V IC=100mA
DC Current Gain
hFE(2) VCE=1.0V IC=800mA
hFE(3) VCE=1.0V IC=5.0mA
Collector-Emitter Saturation Voltage VCE(sat) IC=800mA IB=80mA
Base-Emitter Saturation Voltage
VBE(sat) IC=800mA IB=80mA
Collector-Emitter Voltage
VBE VCE=1.0V IC=10mA
Transition Frequency
Output Capacitance
fT VCE=10V IC=50mA
Cob
VCB=10V
f=1.0MHz
IE=0
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
40
V
25
V
6.0
V
0.1 μA
0.1 μA
85
300
40
45
0.28 0.5 V
0.98 1.2 V
0.66 1.0 V
100 190
MHz
9.0
pF
http://www.fsbrec.com
2/6
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