 English |
|
|
|
|
|
|
|
| 3DG5609 Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon NPN transistor in a TO-92LM Plastic Package. | |||
| |||
| ◁ |
3DG5609
Rev.E Mar.-2016
æéåæ° / Absolute Maximum Ratings(Ta=25â)
åæ°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符å·
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
DATA SHEET
æ°å¼
Rating
25
20
5.0
1.0
900
150
-55ï½150
åä½
Unit
V
V
V
A
mW
â
â
çµæ§è½åæ° / Electrical Characteristics(Ta=25â)
åæ°
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
符å·
Symbol
æµè¯æ¡ä»¶
Test Conditions
VCBO IC=10μA
IE=0
VCEO IC=1.0mA IB=0
VEBO IE=10μA
IC=0
Collector Cut-Off Current
ICBO VCB=25V IE=0
Emitter Cut-Off Current
IEBO VEB=5.0V IC=0
DC Current Gain
Collector to Emitter Saturation
Voltage
hFE(1)
hFE(2)
VCE=2.0V
VCE=2.0V
VCE(sat) IC=800mA
IC=0.5A
IC=1.0A
IB=80mA
Base to Emitter Saturation Voltage VBE(sat) IC=800mA IB=80mA
Transition Frequency
Collector output capacitance
fT VCE=2.0V IC=500mA
Cob
VCB=10V
f=1.0MHz
IE=0
æå°å¼ å
¸åå¼ æå¤§å¼ åä½
Min Typ Max Unit
25
V
20
V
5.0
V
1.0 μA
1.0 μA
60
240
30
0.5 V
1.2 V
80
MHz
15
pF
http://www.fsbrec.com
2/6
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese