3DD5023 Datasheet, PDF (2/6 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCY

3DD5023
Rev.F Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
P_C(Tc=25℃ )
T_j
T_stg
DATA SHEET
数值
Rating
1500
800
5.0
6.0
2.0
40
150
-55～150
单位
Unit
V
V
V
A
W
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain*
Collector to Emitter Saturation
Voltage*
Base to Emitter Saturation
Voltage*
Fall Time
Transition Frequency
*:脉冲测试 tp≤300μs,δ≤2%
符号
Symbol
I_CBO
I_EBO
h_FE*
V_CE(sat)*
测试条件
Test Conditions
V_CB=1500V I_E=0
V_EB=5.0V I_C=0
V_CE=5.0V I_C=1.0A
I_C=4.0A
I_B=1.0A
V_BE(sat)*
t_f
f_T
I_C=4.0A
I_B=1.0A
V_CC=100V
2I_B1=-I_B2=1.0A
V_CE=10V
f=0.3MHz
I_C=5.0A
I_C=0.1A
最小值 典型值 最大值 单位
Min Typ Max Unit
1.0 mA
40
200 mA
10
40
5.0 V
1.5 V
1.0 μs
2
MHz
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