3DD13007B8D Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon NPN transistor in a TO-220 Plastic Package

3DD13007B8D
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Base Current - Continuous
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
P_C(Tc=25℃ )
T_j
T_stg
DATA SHEET
数值
Rating
700
400
9.0
7.0
16
4.0
2.0
80
150
-55～150
单位
Unit
V
V
V
A
A
A
W
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Collector cut-off current
Emitter Base Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation Voltage
Output Capacitance
Transition Frequency
Fall time
Storage time
符号
Symbol
V_CBO
V_CEO
V_EBO
I_CBO
I_CEO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)(1)
V_CE(sat)(2)
V_CE(sat)(3)
V_BE(sat)(1)
V_BE(sat)(2)
C_ob
f_T
t_f
t_S
测试条件
Test Conditions
I_C=1mA
I_E=0
I_C=10mA
I_E=1mA
V_CB=700V
V_CE=400V
V_EB=9.0V
V_CE=5.0V
V_CE=5.0V
I_C=5.0A
I_C=2.0A
I_C=8.0A
I_C=5.0A
I_C=2.0A
V_CB=10V
V_CE=10V
f=1MHz
V_CE=5V
(UI9600)
I_B=0
I_C=0
I_E=0
I_B=0
I_C=0
I_C=2.0A
I_C=5.0A
I_B=1.0A
I_B=0.4A
I_B=2.0A
I_B=1.0A
I_B=0.4A
f=1MHz
I_C=0.5A
I_C=0.5A
最小值 典型值 最大值 单位
Min Typ Max Unit
700
V
400
V
9.0
V
0.1 mA
0.1 mA
0.1 mA
10
40
5.0
30
0.9 V
0.6 V
2.0 V
1.5 V
1.1 V
110
pF
8
MHz
0.6 μs
3
9 μs
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