3CD910 Datasheet, PDF (2/6 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon PNP transistor in a TO-126F Plastic Package.

3CD910
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current – Continuous
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
P_C(TC=25℃)
T_j
T_stg
DATA SHEET
数值
Rating
-30
-30
-5.0
-3.0
1.25
10
150
-55～150
单位
Unit
V
V
V
A
W
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
符号
Symbol
测试条件
Test Conditions
Collector Cut-Off Current
I_CBO
V_CB=-30V I_E=0
Emitter Cut-off Current
I_EBO
V_EB=-5.0V
DC Current Gain*
h_FE*
V_CE=-3.0V
Collector to Emitter Saturation
Voltage*
Base to Emitter Saturation
Voltage*
Gain-Bandwidth Product
V_CE(sat)*
V_BE(sat)*
f_T
I_C=-1.5A
I_C=-1.5A
V_CE=-5.0V
f=1.0MHz
*脉冲测试：脉宽≤300μS，占空比≤2.0%。
*pulse test: pulse width≤300μS,duty cycle≤2.0%.
I_C=0
I_C=-0.5A
I_B=-0.15A
I_B=-0.15A
I_C=-0.5A
最小值 典型值 最大值 单位
Min Typ Max Unit
-10 μA
-10 μA
100
400
-1.0 V
-2.0 V
5.0
MHz
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